A Study of N-Tunneling Field Effect Transistor (NTFET) through Silvaco TCAD Simulator to Overcome the Technology Limitation of Conventional MOSFET

Authors

  • Praveen Kumar Singh ECE, SHIATS (Deemed-to-be-university), U.P., India Author
  • Anil Kumar ECE, SHIATS (Deemed-to-be-university), U.P., India Author
  • A.K. Jaiswal ECE, SHIATS (Deemed-to-be-university), U.P., India Author
  • Rajeev Paulus ECE, SHIATS (Deemed-to-be-university), U.P., India Author
  • Mayur Kumar ECE, SHIATS (Deemed-to-be-university), U.P., India Author

Keywords:

TFET, band-to-band tunneling, short channel effect, sub-threshold swing.

Abstract

In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce high drive current at very low supply voltage (0.1V) with very low leakage current negligible.

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Published

2014-06-30

Issue

Vol.4, No.3 (May/Jun 2014)

Section

Articles

How to Cite

A Study of N-Tunneling Field Effect Transistor (NTFET) through Silvaco TCAD Simulator to Overcome the Technology Limitation of Conventional MOSFET. (2014). International Journal of Current Engineering and Technology, 4(3), 2088-2091. https://ijcet.evegenis.org/index.php/ijcet/article/view/997