I-V Characteristics of ITO/CdTe/Al2O3/Si/Au Thin Film Solar Cell

Authors

  • Mustafa M. A. Hussein Department of Physics, College of Science, University of Baghdad Author
  • Manal M. Abdullah Department of Physics, College of Science, University of Baghdad Author
  • Wasan R. Saleh Department of Physics, College of Science, University of Baghdad Author
  • Kadhim A. Aadem Department of Physics, College of Science, University of Baghdad Author

Keywords:

Solar cell; CdTe; Al2O3; tunneling; efficiency; fill factor.

Abstract

The CdTe/Al2O3/Si solar cells have been fabricated on p-Si wafer by thermal evaporation and ALD methods at different
thicknesses of Al2O3 (1.7, 3.5, and 4.5nm). In this work, the tunneling effect of the ultrathin oxide layer was studied. The
electrical properties including I-V characteristics are studied and interpreted. Gold and indium tin oxide (ITO) are used
as back and front contacts, respectively. It was found that the quantum efficiency and filling factor have maximum values
at thickness of 1.7nm. The dark current of devices was very close to zero.

References

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Published

2014-06-30

Issue

Vol.4, No.3 (May/Jun 2014)

Section

Articles

How to Cite

I-V Characteristics of ITO/CdTe/Al2O3/Si/Au Thin Film Solar Cell. (2014). International Journal of Current Engineering and Technology, 4(3), 1926-1929. https://ijcet.evegenis.org/index.php/ijcet/article/view/962