Influence of Annealing Temperature on Morphology and Electrical Properties of ZrO2:CuO Thin Films Prepared by Pulse Laser Deposition

Abstract

Morphology and electrical properties of Zirconium Oxide (ZrO2) pure and doped with (0,5,8 and 10 ) % copper oxide (CuO), prepared by using the pulsed laser deposition technique using a laser pulse with Nd:YAG wavelength (1064 nm), which enabled quality factor of a repetitive rate (6 Hz) and pulse duration (10 ns) and energy laser (1000 mJ) on the substrate of the glass with different annealing temperatures (RT,373,473)K. The morphology of the surface was examined by using an atomic force microscope (AFM). It can be found that the average grain size get to decrease with increasing of CuO content while increases with increasing of annealing temperature (Ta). The roughness results reveal increases with increasing of CuO content while decreases with increasing of annealing temperatures. D.C Conductivity measurements showed that there two transition mechanisms and there are two activate energies Ea2 , Ea1 for films ZrO2:CuO with ratios (0,5,8 and 10) %. Hall effect measurements showed that all the films ZrO2:CuO was kind of p-type for each ratios.