The Mechanisms of AC-conductivity for Ge0.4Te0.6 Thin Films

Authors

  • I.H. Khudayer Department of Physics, College of Education for Pure Science / Ibn Al-Haitham,, University of Baghdad, Baghdad, Iraq. Author

Keywords:

AC-conductivity, Ge0.4Te0.6, thin films, dielectric constant, polarization.

Abstract

The Ge0.4Te0.6 alloy has been prepared. Thin films of Ge0.4Te0.6 has been prepared via a thermal evaporation method with 4000A thickness, and rate of deposition (4.2) A/sec at pressure 2x10-6 Torr. The A.C electrical conductivity of a-Ge0.4Te0.6 thin films has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism.
Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have been calculated for the annealed thin films.

References

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Published

2014-04-30

Issue

Vol.4, No.2 (Mar/Apr 2014)

Section

Articles

How to Cite

The Mechanisms of AC-conductivity for Ge0.4Te0.6 Thin Films. (2014). International Journal of Current Engineering and Technology, 4(2), 495-499. https://ijcet.evegenis.org/index.php/ijcet/article/view/560