Characterization of Zinc oxide Contact on Metal Substrates using Low-Cost Fabrication Techniques and TCAD

Authors

  • Priyadarshini Jena Department of ECE Engineering, CUTM, Paralakhemundi, Odisha Author
  • Rajesh Ku Mishra Department of EIE Engineering, CUTM, Paralakhemundi, Odisha Author
  • K.Hari Krishna Department of ECE Engineering, CUTM, Paralakhemundi, Odisha Author

Keywords:

Silvaco-atlas, ZnO, Rectifying Characteristics, Sensor, Nanotechnology.

Abstract

In this project we present the modelling and simulation of ZnO contact on metal substrates using SILVACO TCAD Tool. SILVACO Software is a 2D simulation tool used for modelling and fast simulation of all types of semiconductor devices. It provides two simulators-Athena and Atlas. ZnO is a compound semiconductor with a wide band-gap used for various fields of optoelectronics, sensors and nanotechnology. The model for ZnO contact on metal substrates like (Al, Cu) interaction showed the effect of ZnO, its stability of contact formation and electrical characteristics. ZnO being a compound semiconductor it’s challenging to produce rectifying characteristics over metal substrates. This was possibly obtained through Silvaco. Both the electrical and material characterization of ZnO on metals were analysed and studied. This project proposed an easy and low-cost characterization that was able to emphasize the model designing in Silvaco Software. The stable contact formation of ZnO attracted further in various high- frequency applications. All simulated results and the experimental results evolved are comparatively analysed and studied. Experimental results are taken inputs for the simulators –Atlas which ultimately proved and showed the models functioning properly. Advantages of Modelling—Easy and fast simulation in order to cope up with real-time fabrication
methods.

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Published

2012-12-31

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Articles

How to Cite

Characterization of Zinc oxide Contact on Metal Substrates using Low-Cost Fabrication Techniques and TCAD. (2012). International Journal of Current Engineering and Technology, 2(4), 399-402. https://ijcet.evegenis.org/index.php/ijcet/article/view/46