Dependence of Conductivity and Carrier Mobility on Thickness and Annealing Temperature of a- Ge:Sb Films

Authors

  • Hussein Kh. Rsheed University of Baghdad, College of Science, Physics Department, Baghdad, Iraq Author
  • Amal K. Jassim University of Baghdad, College of Science, Physics Department, Baghdad, Iraq Author
  • Ammar S. Hameed University of Baghdad, College of Science, Physics Department, Baghdad, Iraq Author

Keywords:

Thin film, electrical properties, Hall mobility, annealing temperature, Ge:Sb thin films

Abstract

Ge weight doping percentage by 1% antimony (Ge:Sb) films have been deposited by thermal evaporation technique on glass substrate at room temperature under vacuum of 10-5 mbar with rate of deposition near to 10Å/sec. These films of different thickness (0.25, 0.5, 0.75, 1.0) μm have been annealed at different temperatures Ta (373, 473)K, to study the effect of thickness and annealing temperature on the electrical properties. These properties include the (DC, AC) conductivity from which the transport mechanism of the charge carriers can be estimated, and also the Hall Effect which gives information about the type, density and mobility of carriers.

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Published

2015-06-30

Issue

Vol.5, No.3 (May/Jun 2015)

Section

Articles

How to Cite

Dependence of Conductivity and Carrier Mobility on Thickness and Annealing Temperature of a- Ge:Sb Films. (2015). International Journal of Current Engineering and Technology, 5(3), 1542-1546. https://ijcet.evegenis.org/index.php/ijcet/article/view/2138