Optical properties of InxGa1-xAs quantum Wells Grown by Molecular Beam Epitaxial Technique

Authors

  • Laxman Survase Shr. S.H. Kelkar College of Arts, Commerce and Science, Devgad.Dist- Sindhudurg. Author
  • Sen Mathew Center for High Technology Materials (CHTM) University of New Mexico (UNM). Author
  • Mahesh Gokhale Tata institute of fundamental research Mumbai; India Author
  • Manohar Nyayate B.N. Bandokar College; Thane, India Author

Keywords:

InxGa1-xAs, quantum wells, photoluminescence, Ramanspectroscopy

Abstract

The samples were grown on (001)-oriented GaAs substrates using molecular beam epitaxy system. The effect of change in the percentage of indium on the optical properties of InxGa1-xAs quantum well structures is investigated using the temperature-dependent photoluminescence from 15 K to 300 K and Raman spectroscopy.The temperature-dependent integrated photoluminescence intensities of the samples reveal that the photoluminescence intensity is significantly enhanced by about 27 times at 15 K with respect to that at 300 K.

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Published

2014-12-31

Issue

Vol.4, No.6 (Nov/Dec 2014)

Section

Articles

How to Cite

Optical properties of InxGa1-xAs quantum Wells Grown by Molecular Beam Epitaxial Technique. (2014). International Journal of Current Engineering and Technology, 4(6), 4133-4135. https://ijcet.evegenis.org/index.php/ijcet/article/view/1560