Enhanced Hydrogen Sensing Parameters of MWCNT – SnO2 Thin Film

Abstract

SnO2 metal oxide thin film structure modified with MWCNT was fabricated using relatively simple chemical preparation solution method and exploited as hydrogen sensor. The structural, surface morphology, topography, and electrical conductance properties of the prepared samples kept at different temperatures were investigated and explored. Although their room – temperature sensitivity was too low, the tested MWCNT – modified SnO2 structures showed considerably high sensing response toward H2 gas at high temperatures in comparison to the corresponding pure sensing elements. Thus, confirming the significant role of these nano structures in enhancing the semiconductor metal oxides sensing characteristics toward both oxidizing and reducing gases.