Magnetic property of Zn0.8CO0.2O Diluted Magnetic Semiconductors by Auto Combustion Method

Authors

  • Mohsen Ahmadipoura Center for Nano science and Technology, Institute of Science and Technology, Jawaharlal Nehru Technological University Hyderabad, 500085, India Author
  • Mozhgan Hatamia Center for Nano science and Technology, Institute of Science and Technology, Jawaharlal Nehru Technological University Hyderabad, 500085, India Author
  • Mozhgan Hatamia Center for Nano science and Technology, Institute of Science and Technology, Jawaharlal Nehru Technological University Hyderabad, 500085, India Author
  • Kalagadda Venkateswara Raoa Center for Nano science and Technology, Institute of Science and Technology, Jawaharlal Nehru Technological University Hyderabad, 500085, India Author

Keywords:

Magnetic Nanoparticle, XRD, UV-visible, FESEM, TEM, VSM

Abstract

Polycrystalline Zn0.8Co0.2O diluted magnetic semiconductors were synthesized by auto combustion technique from aqueous solutions of Zn and Co acetates using polyethylene glycol as catalyst. A complete series of Co (II) substituting Zn(II) was studied, from the structural point of view, by XRD and FTIR. The X-ray diffraction patterns of the films showed that the Co-doped ZnO powder exhibit wurtzite crystal structure. Magnetic hysteresis loops were observed at room temperature, indicating that ferromagnetism can be realized with Co doping into ZnO. Optical absorption measurements showed absorption bands indicating the presence of Co ions in substitution of Zn ions. The calculated band gap value of 2 at% Co doped samples was found to be around 3.37 eV. The morphology and crystalline size of the synthesized powders were evaluated by field emission scanning electron microscopy and transmission electron microscopy (TEM).

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Published

2013-03-31

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Articles

How to Cite

Magnetic property of Zn0.8CO0.2O Diluted Magnetic Semiconductors by Auto Combustion Method. (2013). International Journal of Current Engineering and Technology, 3(1), 85-88. https://ijcet.evegenis.org/index.php/ijcet/article/view/105