Characterization of N+ NN+ Transistor (3N) using 2D ATLAS Simulator. International Journal of Current Engineering and Technology, [S. l.], v. 4, n. 3, p. 1823–1825, 2014. Disponível em: https://ijcet.evegenis.org/index.php/ijcet/article/view/940. Acesso em: 6 apr. 2026.