Characterization of CdTe Nanorods Visible Photoconductive Detector

Abstract

CdTe nanorods are grown with varying reaction time period from (1-3h). The samples are characterized structurally and optically. A decrease in band gap is observed with increase the reaction time period. CdTe nanorods visible photoconductive detector films have been prepared on n-type porous silicon (PS) layer with etching time 10 min. The crystalline structure appears Hexagonal when the samples annealed under vacuum at 400C° for 1h. The Hall measurements show that all samples were p–type semiconductor. The response time of the fabricated CdTe/PS detector was measured by illuminating the samples visible light (Halogen lamp) and its values were increased from 52.2μs for 1hour to 0.378ms for 3 hours, the responsivity of the detector was decreased from 0.61A/W to 0.19 A/W and the highest specific detectivity was found to be 6.94×1011W-1Hz1/2cm for 2hours reaction time.